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| inchange semiconductor isc product specification isc silicon pnp power transistor BD808 description dc current gain - : h fe =30@ i c = - 2a collector-emitter sustaining voltage- : v ceo(sus) = -60v(min) complement to type bd807 applications designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -70 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i b b base current -6 a p c collector power dissipation @ t c =25 90 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.39 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD808 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -200ma ;i b = 0 -60 v v ce(sat) collector-emitter saturation voltage i c = -4a; i b = -0.4a b -1.1 v v be( on ) base-emitter on voltage i c = -4a ; v ce = -2v -1.6 v i cbo collector cutoff current v cb = -70v; i e = 0 -1.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -2.0 ma h fe-1 dc current gain i c = -2a ; v ce = -2v 30 h fe-2 dc current gain i c = -4a ; v ce = -2v 15 f t current-gain?bandwidth product i c = -1.0a ; v ce = -10v; f test = 1.0mhz 1.5 mhz isc website www.iscsemi.cn 2 |
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